TU Wien is Austria's largest institution of research and higher education in the fields of technology and natural sciences. With over 26,000 students and more than 4000 scientists, research, teaching, and learning dedicated to the advancement of science and technology have been conducted here for more than 200 years, guided by the motto "Technology for People". As a driver of innovation, TU Wien fosters close collaboration with business and industry and contributes to the prosperity of society.
At the Institute of Solid State Electronics, in the Research Unit of Nanoelectronic Devices TU Wien is offering a position as university assistant (prae-doc) limited to expected 4 years for 30 hours/week. Expected start: June 2025.The recent progress on Artificial Intelligence (AI) is driving an unprecedented demand for hardware platforms that can facilitate the training and execution of logic networks. The currently available hardware architectures, however, result in an enormous power demand. New solutions are needed for lowering these energy requirements, allowing for their offline execution. Logic-in-Memory and Neuromorphic Computing are some of the most promising approaches to reach this goal, but the development of new materials and device architectures is needed. Recently, it has been demonstrated that thin-film ferroelectrics are promising materials to enable these innovative technologies. Nevertheless, the development of dedicated device architectures is needed to fully take advantage of this class of materials. Within the advertised doctoral position, this task will be tackled experimentally, both at the material and device fabrication levels, by exploring the properties of ALD-grown Hf0.5Zr0.5O2, the most promising thin-film ferroelectric, and by integrating it into nanoscaled semiconductor devices. The candidate´s main goal is to design, fabricate and characterize ferroelectric-based nanoscaled devices for the implementation of neuromorphic applications. The candidate will be trained to work in a cleanroom environment, and will learn at first hand all the necessary techniques, which will enable her/him to engineer a ferroelectric-based neuromorphic device, from the planning phase, through the material optimization step, up to the nanofabrication and electrical testing.
Tasks:
- The candidate is expected to independently conduct research with a strong international visibility in the field of experimental neuromorphic devices, with a specific focus on ferroelectrically-enhanced Schottky-Junction transistors
- Work in a clean room encompassing nanofabrication of novel electronic devices including ALD deposition techniques, electron beam lithography, nanopatterning and wet-chemical processing
- Technical support in the specification and commissioning of new vacuum RTP and metal-ALD tools and setting-up related processes.
- Characterize the fabricated devices by performing advanced pulsed electrical measurements using probe-stations
- Involvement in academic teaching activities in the field of semiconductor electronic devices both in German and English language
- Writing of scientific publications and presentations in scientific conferences
- Willingness to collaborate with international project partners and carry out research stays abroad
- Qualification and further career development by completing a PhD degree in Electrical Engineering
- Assistance/collaboration in organizational and administrative tasks and symposia
Your profile:
- Acceptance requirement is a successful Master or Diploma degree in the field of Electrical Engineering, Physics or equivalent fields of study
- Proof of detailed knowledge in some of the following fields of science is necessary: electronic semiconductor devices, microelectronics, ferroelectricity, material science, and / or solid-state physics
- Hands-on experience in working in a clean room, micro and nano-fabrication, characterization of transistors and ferroelectric materials, semiconductor technology, experimental solid-state physics and / or electrical semiconductor characterization is advantageous
- Ability to teach in German and English language in the fields of “semiconductor devices”
- Team-player, organisational and analytical skills as well as a structured way of working
We offer:
- A creative environment of a highly active research institute in the field of semiconductor devices in one of the most liveable cities of the world
- Direct access to a modern clean-room semiconductor nanofabrication facility, zmns, physical and electrical characterization laboratories
- Continuing personal and professional education and flexible working hours
- Central location with very good accessibility (U1/U2/U4 Karlsplatz)
Entry level salary is determined by the pay grade B1 of the Austrian collective agreement for university staff. This is a minimum of currently EUR 2,786.10/month gross, 14 times/year for 30 hours/week. Relevant working experiences may increase the monthly income.We look forward to receiving your application until June 1st, 2025.
Contact:
TU Wien is committed to increasing the proportion of women in particular in leadership positions. Female applicants are explicitly encouraged to apply. Preference will be given to women when equally qualified, unless reasons specific to a male applicant tilt the balance in his favour. People with special needs are equally encouraged to apply. In case of any questions, please contact the confidant for disabled persons at the university, Mr. Gerhard Neustätter.
If you have any questions, please do not hesitate to contact us Carmen Keck | T: +43 1 588 01 406201 Here you can find also relevant information about the application process.
